Should you buy a GaN Power Adapter? Or is it a scam? || Testing GaN FETs!

21. 03. 2021
137 494 zhlédnutí

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In this video we will be having a closer look at GaN FETs in order to find out whether they will improve power electronics products in the future. For that I got myself a commercial GaN power adapter which I will compare with a more traditional power adapter concerning their efficiency. Afterwards I will measure the resistance and switching speed of a proper GaN FET and finally use it in a buck converter circuit to demonstrate the difference to a normal MOSFET. Let's get started!
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Thanks to the Keysight University Live for sponsoring this video.
2011 Lookalike by Bartlebeats
0:00 Introduction to GaN FETs (Power Adapters)
1:58 Intro
2:50 Testing the efficiency of a GaN Power Adapter and a traditional one
5:43 Selecting a proper GaN FET
6:08 Resistance Test (GaN FET VS MOSFET)
7:00 Switching Test (GaN FET VS MOSFET)
9:46 Buck Converter Test (GaN FET VS MOSFET)
10:42 Conclusion

  • I love watching your videos!!! I don't half to open my own stuff to see whats inside!!!

    Mayumi Hot Asian Step SisterMayumi Hot Asian Step SisterPřed dnem
  • I'm a big fan of your channel and I'm no expert, but I think you missed the main point about GaN devices. They're meant to be run at higher frequencies and higher voltages than silicon devices, so simply swapping them out of a circuit and expecting significant change is not a fair comparison. Comparing them like this is like comparing a Formula 1 car to a Fiat Polski and claiming the difference is only 2%. GaN devices are so-called "wide-bandgap semiconductors" which means they can take higher voltage and higher temperature than silicone (3x the bandgap means 3x the "conductivity" or 3x the breakdown voltage). As you also said, they don't have reverse recovery issues and have faster switching times, therefore they can be run at much higher frequencies. Higher temperature tolerance (smaller heatsinks) and higher switching speed (smaller passives) mean the whole design can be much more compact which is essential for mobile applications (like electric cars, planes, etc). That's the real strength of GaN. This brings us to the problem with this comparison: parasitics become very important at such high frequencies (we're talking tens of MHz here!). Building a 12V converter using through-hole components and dangly mid-air wires with huge loops (not to mention the lack of decoupling capacitors or that loop on that RC snubber) creates a lot of parasitic inductance and switching losses which defeats the purpose of using GaN in the first place. To make a fair comparison I think you should 1.) get a real GaN USB supply (should be easy to find as they're smaller and more expensive) or 2.) build a proper converter using SMT components and a high-frequency board. Again I'm a big fan of yours, but I think GaN got an unfair treatment in this video.

    Szilárd LiptákSzilárd LiptákPřed 2 dny
  • Hi nice video...tbh i dont think you can ever compare a GAN vs. a traditional MOSFET like this. Usually Mosfets are used for voltages < 200 V and GAN are used for higher voltages > 200 V. You should compare a GAN FET with a IGBT or MOSFET at a similar operating voltage. Main purpose of GAN are the fast switching , low gate charge, smaller RDson, almost non existent reverse recover time as you already mentioned. IDK if your BC circuit is the same for both the FETs. Also you are stepping down from 12 V to 5 V for a GAN rated for 650 V i think it is completely injustice for the poor guy :D Faster switching just makes your inductor and output cap smaller ;) so would be interesting to see the performance of a IGBT with a GAN FET at higher voltages IDK if these PSU with GAN offers any advantages when operating at 230 V tbh there are good enough MOSFETs to operate in this voltage range. Again it depends on the circuit topology. May be if they use a FB then filter the switching devices will see at least 320 V or so may be here GAN PSU could be slightly better. But again if the PSU is rated for ~ 60 to 100 W at the input then the switching device is not seeing much current could in range of 0.4 A this times the 0.15 Ohms gives a steady state power loss of 60 mW plus the switching losses so again here may be the GAN has a slight advantage.

    Srinivas sSrinivas sPřed 2 dny
  • 11:02 "GaN Fets are certainly not a scam and will improve power electronics" Yea that is true, BUT you did gloss over the fact that the charger you bought did NOT have a GaN Fet inside. So without proof that there is one inside it just becoms another marketing tool. So GaN Fets are not a scam but manufacturers placing "GaN" on their product IS A SCAM.

    SuperBrainAKSuperBrainAKPřed 3 dny
  • I think the main selling point of GaN power adapters is that is allows for a significantly smaller size. I may be wrong, but I think I recall hearing that some years ago.

    Steen SchüttSteen SchüttPřed 3 dny
  • I wonder can i replace my mosfets in my ebike controller with gan fets?

    A-A RonA-A RonPřed 4 dny
  • What kind of pens do you use?

    George MooreGeorge MoorePřed 4 dny
  • Excellent!

    Stephen PhilpStephen PhilpPřed 5 dny
  • I'm a noob so please forgive me my stupid question: Why use a transformer to drive the FET rather than driving it directly? Also, how do you determine the required characteristics of such transformer? Thanks for all your awesome vids. They are both interesting and inspiring.

    Niels AndersenNiels AndersenPřed 5 dny
  • GaN FETs have been around, mostly in RF since the fast switching speeds help with rise/fall times in pulsed transmissions. It’s interesting to see their applications in improving efficiency in SMPS. Even though the gains in efficiency are less than the increase in cost I will be interested to see their use grow as that cost decreases over time.

    Eric CarlsonEric CarlsonPřed 6 dny
  • So, a few things to point out (I play with power electronics for a living. I have a PhD on the topic of series connecting normally on power devices to obtain self balanced high voltage power modules. I now work in China for a state sponsored power electronics research facility, particularly on consumer and data center GaN and SiC applications): 1. GaN FETs are not nearly as expensive as depicted from DigiKey/Mouser. Western distributors are known to add a lot of profit on hard to sell (niche) items like GaN/SiC transistors and FPGAs. The real cost of those things rated for a 65W adapter (130~180mR typ., 600~650V max.) in China is around $1 for Chinese parts (InnoScience, etc.) and $1.5 for Western parts (GaN Systems, etc.). A comparable state of the art Si device will cost you $0.5 for Chinese parts (Wayon WMZ26N65C4) and $1 for Western parts (Infineon IPL60R185C7). 2. Transphorm makes D-mode GaN, which is normally on. They have a reliability advantage due to the lack of atom-thin gate structure, so they are commonly used in automotive applications and military RF applications. For consumer stuff, E-mode is more commonly used due to it being normally off. To make a D-mode device normally off, you need to series connect a low voltage Si MOSFET, so when the MOSFET is off, the drain potential of the Si MOSFET (which is tied to the source of the GaN HEMT) is pulled high, since the gate of the GaN is tied to the source of the Si MOSFET, the GaN sees a negative voltage on its gate with respect to its source, so it turns off. So what you are measuring is actually the input characteristics of the Si MOSFET, not the GaN. 3. Gate charge determines how easily and efficiently the FET is driven, not how it outputs (for most high voltage applications, Qout is much more important than Qin due to much higher Vds than Vgs). For GaN, the output figure of merit number does not look good, even for E-mode devices. Only in very few applications like QR flyback GaN has a marginally advantage compared with Si, and even that is mostly for marketing reasons. For most applications, rest of being able to be driven faster and switch faster (which can be done equally well with well designed Si drivers, anyway you are limited by EMI regulations), they do not possess a much better performance compared with Si. 3.1: A few months back I did a round up of power FETs, I tested saturation current to output capacitance@100V ratio at a few given Vds, Vgs and Tj of a few top Si super junction MOSFETs (Infineon, Wayon, Toshiba, ANHI) and a few GaN E-mode HEMTs (InnoScience, GaN Systems) of similar voltage ratings. It turns out GaN has not only no advantages to those top Si MOSFETs, they lack by a huge margin. 4. About reverse recovery, E-mode GaN does not have a reverse recovery charge, but they have horribly high Vf in third quadrant freewheeling mode, some 3V~4V. Cascade D-mode GaN does have a reverse recovery charge from the series connected Si MOSFET body diode. This can be alleviated by parallel connecting a low voltage Schottky diode with the MOSFET, but so far I've not seen this being done, probably for patent reasons. Cascade devices do have lower freewheeling Vf due to the GaN is in conduction mode (since there can't be a gate bias voltage from nowhere and they are normally on), the only Vf (other than Rdson*If) comes from the body diode of the Si MOSFET. 5. Some of the smallest and densest chargers are Si, like the Delta Innergie 60C. The biggest reason why GaN is massively used in chargers is because Xiaomi invested in a large portion of Navitas and Xiaomi wants Navitas to bloom, so Xiaomi used its consumer electronics market dominance to drive the market towards GaN. When other companies see this novelty marketing makes money, they so the same, that's what landed the market now what it is. 6. This website ( is probably the world's largest charger teardown database. When in doubt about a charger, search here. It is only offered in Chinese, but you only need to see the pictures, not the marketing verbiage. References: 1. My visits to suppliers. 2. Trahsphorm website, VisIC website. 3. Trahsphorm website, VisIC website and USCi website. 3.1. 4. EPC, GaN Systems and Transphorm datasheets. 5. Innergie kickstarter page and some market research reports. 6. The website itself.

    Bo GaoBo GaoPřed 7 dny
  • gay

    UNITYUNITYPřed 7 dny
  • Regardless of the technology inside, I'm happy with my new Xiaomi "GaN" charger. I've looked up a teardown (free document on ResearchGate) to see how they fit a 65W PD charger into such a small space, and the engineering is on point!

    ArenaArenaPřed 8 dny
  • here's what I think though, efficiency is not the primary concern for most consumers. what I think most people wants is: - First, a smaller charger that can output more so their phone can charge faster depending on what standards it used, and light to carry around when needed. - Second is safety, so that their phones don't puff out some magic smoke while charging. what GaN promises is smaller charger with higher and more stable output compared to traditional silicon mosfets. So yeah, less chonky 200W laptop chargers (which is currently about the size of a brick with traditional silicon) is what consumer wants. not laptop charger that has 99% efficiency and still chonky asf. So yeah, great video overall, shame it starts with the wrong assumption regarding the consumer market.

    Josua DJosua DPřed 9 dny
  • I wonder how much power could have been saved by saving all these 's'.

    Anon AnonAnon AnonPřed 9 dny
  • I'm really scared about how much paper he runs through for the videos :p Great video though :)

    Dexter ManDexter ManPřed 10 dny
  • Does it not use GAN power diodes? That would make more sense as GAN diodes have lower forward voltage thresholds of 0.4V compared to 0.7V traditionally

    Adam HughesAdam HughesPřed 11 dny
  • It would be really funny, I think, if on most of these, GaN just referred to the LED that indicates it's on.

    ManWithBeard1990ManWithBeard1990Před 12 dny
  • You only get the max advantages of GaN if you also design the switch-mode power supply to run at higher frequency, taking advantage of lower Cg and Cout of the GaN. By higher i mean tens of MHz therefore using really small and efficient magnetics. Also, it is worth mentioning the fact that another competitor, SiC material, that has been around for some time in fast diodes and FETs, and has low in- and out- capacitances, suffers of higher internal Rgate, which all but negates its advantages in higher frequency switching. Over all GaN seems to eat the lunch of good old Si.

    No ReverseNo ReversePřed 12 dny
  • check your email!! (and respond) waitin here in canuckistan!

    Kindanyume .KindanyumeKindanyume .KindanyumePřed 12 dny
  • Two things. I have understood that the gate drive needs to be different in order to achieve the efficiency of GaN parts. Maybe that was for the very first units? Another item though is the ability to operate at higher frequency, assuming your snubber allows it without eating all the efficiency benefits -- being lossy of course. But the gate capacitance is not "five times lower". It is one fifth of the reference.

    Pellervo KaskinenPellervo KaskinenPřed 13 dny
  • Hey Scott, I need some help with a current triggered circuit. I wish to switch a bulb on/off based on the current flow in another circuit. I tried to measure the resistance across a shunt in the primary circuit but couldn't. Please help

    Anirudh SwarnakarAnirudh SwarnakarPřed 13 dny
  • His notes are epic! They should teach his method in school.

    Ahmed SalemAhmed SalemPřed 13 dny
  • Is he German ?

    gmxdevilgmxdevilPřed 13 dny
  • Hi Scott, A good video about an important topic but I have to say it is a unfair comparison. The CP technology MOSFET you were using is a very old and slow device. You should have used a C7 or at least a P7 Infineon MOSFET. They are switching faster and have smaller capacitances. Furthermore in soft switching topologies (like LLC or LCC ) the switching losses are basically not existing and there are only the gate drive losses and rdson losses. In these cases the advantage of the Gan gets even smaller. But if 1 or 2% efficiency is worth 10 times the price? Cheers

    Just PTJust PTPřed 13 dny
  • unsubscribed because your anti-rms shilling crap

    CapunoCapunoPřed 13 dny
  • Hearing the inhaling at the end of each sentence is making me feel deeply uncomfortable in a way I cannot describe.

    Seagull AustralisSeagull AustralisPřed 14 dny
  • 5:49 you say it with feeling. Dam expensive. :D

    Sherwin BontuyanSherwin BontuyanPřed 14 dny
  • You have used a cheap power brick from an chinees conpany, try to use anker GaN power brick insted

    Om AgrawalOm AgrawalPřed 14 dny
  • Consumers don't care about power efficiency, they care about charge speed only.

    SlovenMalaphorSlovenMalaphorPřed 14 dny
  • Du bist Linkshänder

    lolgamerslol 11lolgamerslol 11Před 14 dny
  • Yes! GaN fets class D amplifiers doom on the way!

    olipitoolipitoPřed 14 dny
  • I really love your videos and hope i can meet you 💗

    Abdo MgahedAbdo MgahedPřed 14 dny
  • Maybe good when talking about MegaW of power. For a phone charger... if we get one that actually contains a GaN device we can save maybe 5 cents a year on power...

    stewartrvstewartrvPřed 14 dny
  • Still 2% less power consumption over hundreds of thousands makes a difference.

    Dr.Sloth SapperDr.Sloth SapperPřed 14 dny
  • This is a really good video, I think you need to start busting consumer electronics/gadgets. Too often those who review consumer electronics and gadgets lack electronics knowledge and those who have electronics knowledge lack gadget knowledge and don't review them even though gadgets are all about cutting edge or at least latest electronics.

    BR ECBR ECPřed 15 dny
  • Excellent video Scott, looks like we're are at 90% efficient for laptop charging though USB-C now :)

    Matt WillisMatt WillisPřed 15 dny
  • The difference is actually much better than measured. With an output voltage of 5 volts, the junction voltage of the Schottky diode is a significant loss, and that won't change with which type of FET was used. A better challenge, would be to build a synchronous rectifier system, where the catch diode is replaced by a FET, eliminating the ~.4 volt drop of the Schottky, then, you will see a much bigger difference. An LT1158CN half bridge driver chip would be a good choice, since it uses adaptive gate threshold voltage, rather than a fixed delay, to minimize the dead time, rather than relying on a fixed dead time. With this, you can really compare the difference between silicon, silicon carbide, and gallium FET's. The lower the OUTPUT voltage, the more synchronous rectification helps improve efficiency.

    Vincent RobinetteVincent RobinettePřed 15 dny
  • Did you contact the manufacturer of that charger to complain about the lack of GaN in their GaN Product?

    Persoana a 3-aPersoana a 3-aPřed 15 dny
  • This is reminiscent of the "graphene" power banks. They just add a new buzzword as a sales gimmick. I'm not sure I'm comfortable with the promise of hundreds of watts of power in tiny plug-top PSUs. The words "bang" and "skidmark" come to mind.

    bigclivedotcombigclivedotcomPřed 15 dny
    • @Henning Hoefer oh you were talking generically.

      ConsoleConsolePřed 7 dny
    • @Console I have, which is why my comment says what's the result in the video. I want to know if this is a widespread problem or just a single incident.

      Henning HoeferHenning HoeferPřed 7 dny
    • @Henning Hoefer watch the video and find out?

      ConsoleConsolePřed 8 dny
    • I also would like to see if there's really GaN parts in those tiny power supplies. In the video, the Mosfet part number was a conventional one...?

      Henning HoeferHenning HoeferPřed 8 dny
    • ​@BR EC The smaller the space you cram a given amount of energy into, the more enthusiastically it'll try to get out and blow up. If a tiny power supply really does offer the same safety and reliability as a big one, obviously there's nothing wrong with it, but it's very easy for manufacturers to call a piece-of-crap product ultra-safe and ultra-reliable. If you think you're going to work with explodey garbage either way, and you know what power rating you need, it's better to work with bigger pieces of garbage, so when they explode it won't be as vigorous.

      DiabloMineroDiabloMineroPřed 11 dny
  • Could you of installed the GaNfet in the power supply and test efficiency after or would it be out of spec?

    TrollFaceTheManTrollFaceTheManPřed 15 dny
  • i love your videos. thank you

    piplup4prezpiplup4prezPřed 15 dny
  • The largest part of the switching losses in the mosfets is not from charging and discharging the Qg, but the drain-source voltage and current "switching". You use around U*I/2 for the turn on and turn off durations. These durations are ofcourse shorter when the mosfet switches faster, which is possible with a lower Qg.

    NicolasNicolasPřed 15 dny
  • It irritates me when you use a screwdriver as a pointer, so dangerously close to an oscilloscope screen.

    ZamaskowanyWolnościowiecZamaskowanyWolnościowiecPřed 15 dny
  • All we need now is a flux capacitor, and a Delorean !?!?!!

    JAMES T. not kirkJAMES T. not kirkPřed 15 dny
  • Hi can you tell me what is the make and model of your USB tester shown here I am trying to find one on Amazon uk but not sure they are genuine Thanks in Advance Andy

    Andy DickinsonAndy DickinsonPřed 16 dny
  • Can you do a dark souls 3 playthrough next?

    Mr.Coolio 4Mr.Coolio 4Před 16 dny
  • I wish your soldering was as neat as your handwriting 😜

    Dylan HDylan HPřed 16 dny
  • GAN for RF applications :)

    Chun Ho KongChun Ho KongPřed 16 dny
  • Which website did you search for the transistors?

    Hrishikesh MalviyHrishikesh MalviyPřed 16 dny
  • Hello.) Try to build more powerful power adapter, for like 20-50Watts and more and then try to compare difference in efficiency. I am wondering - maybe they will show more boost in efficiency in Boost Up converters? Make a boost up converter for laptop, for example: 19V 5A from 8-14V car battery. Thank you!)

    Ivan4es1Ivan4es1Před 16 dny
  • Im currently writing my bachelor thesis about GaN Mosfets (with focus on switching speeds and current measurement at those speeds) and it is really impressive how fast it can get. I am reaching switching speeds of almost 2.x ns at 400V which couldnt be achieved at all with traditional FETs.

    Linze99Linze99Před 16 dny
  • Consumers don't care about efficiency except in special circumstances( like, you know, if it starts getting advertised all over the place). Also this is about small brick chargers used for cellphones etc - and the only thing people care about there is that it charges quicker.

    Captain GrimborneCaptain GrimbornePřed 16 dny
  • Can you please make a video on the CREE MOSFET?

    Jason Saj.Jason Saj.Před 16 dny
  • As someone working in this area, I have my doubts about GaN. SiC gives you about the same performance, but better reliability, as GaN has poor thermal characteristics and can't handle transient overpower as well as SiC (which can basically be considered to work the same as silicon; it doesn't need the same special care that GaN does). I'm not sure how the price compares, but I'm pretty sure they're on the same order of magnitude.

    the Hearththe HearthPřed 16 dny
  • No insight / conclusion on why the newer "GaN"-labeled power supply doesn't actually have a GaN FET ? Perhaps they weren't _technically_ lying, and GaN was used on some other, less significant component ?

    Scott WilliamsScott WilliamsPřed 16 dny
  • @GreatScott! Thanks for your studies of GaN. From your measurements, and your research, do you have any explanation why your first efficiency measurements @4:28 showed the older MOSFET supply being more efficient at lower voltages, while the "GaN"-labeled new supply did better at higher voltages ?

    Scott WilliamsScott WilliamsPřed 16 dny
  • Weirdly... I miss JLCPCB

    Scott WilliamsScott WilliamsPřed 16 dny
  • GaN transistors are very efficient. They go to a higher frequency and less electromagnetic interferences. I work in motor controller industry and EMI is really important especially in drones where you don’t want any sorts of interferences.

    Marius SumutiuMarius SumutiuPřed 16 dny
    • Not to mention that the heat dissipation is waay lower than the standard silicone based FETs therefore they’re way efficient in terms of power in to power out in relation to lost power in forms of heat.

      Marius SumutiuMarius SumutiuPřed 16 dny
  • I am working on a project and I’m wondering if someone who knows a bit about batteries could answer a question.. (I tried searching online but could not find anything) I’m using a amplifier that can handle 5-24v.. I have a old 11.1v lipo battery that will be built into the project but I also use 20v dewalt battery’s on my projects so I was wondering if It would be safe to have a extra plug on the side of my box for the 20v battery and wire all of it so that The negative from the 11.1 and 20v battery’s are connected and go straight to the amplifier and then have a 3 way switch but use it backwards so one on position is putting the power from one battery to the amplifier and the other on position is the other battery...

    Land to water _Land to water _Před 16 dny
  • 5:48 "Damm expensive?!" OK! => LittleScott

    muctopmuctopPřed 17 dny
  • how can i find that eletronic load of yours?

    Drákkōn Malefor NíðhöggrDrákkōn Malefor NíðhöggrPřed 17 dny
  • 2% increase in efficiency might not sound like much, but in the automotive industry, engineers are constantly working on improving fuel efficiency by bare fractions of percents. These things really do add up when deployed at scale.

    Justyn ZachariouJustyn ZachariouPřed 17 dny
  • Hii Great Scott! I'm from india. I watch all your videos... It makes really easy to understand different electronic components and it's importance. Also Please share a informative video about Thin film Platinum RTD temperature sensors and how to use it which I was interested to use in future applications but not having access right now. Thank You for all cool videos..

    Sunny SurwadeSunny SurwadePřed 17 dny
  • Interesting Video Thanks :-) So at this moment in time you are not saving any money because these GaN devices cost more, also you could perhaps get ripped off with the false specifications used in a potentially dangerous product :-(

    Ronnie RushRonnie RushPřed 17 dny
  • Most consumers don't actually care about efficiency. They want convenience: fast charging, light and compact power adapter that is easy to carry around, and low prices.

    MGYouTube AccountMGYouTube AccountPřed 17 dny
  • So GaN FETs aren't a scam but Chinese power adaptors are

    Nick's StuffNick's StuffPřed 17 dny
  • Watched the video, suddenly got spammed with adds of these chargers

    Tariq El AgeliTariq El AgeliPřed 17 dny
  • Instantly got a Gan ad on this video 👀

    Eilaithen HarveyEilaithen HarveyPřed 18 dny
  • For the price of a GaN FET suitable for your average smps you will get two high end mosfets which are at least as good... the RDSon of the shown parts is quite high overall

    Dennis LubertDennis LubertPřed 18 dny
  • can you also make a video on whether you should fast charge your device other than 5V, there is lot of talk going on fast charge damages your battery, occasional fast charging, i personally would stick to 5V 2A chargers after one of my phones battery lost its capacity & i feel fast charging damaged the battery, there is state of the art technology to protect the battery but still some people say to charge between 15-90% manually & do not charge overnight....

    bazrazin1bazrazin1Před 18 dny
  • What is the name of the pen you used? I love them 😀

    Susankar BorgohainSusankar BorgohainPřed 18 dny
  • 👍👍

    Gacheru MburuGacheru MburuPřed 18 dny
  • my takeaway from this: GaN FETs are really efficient... GaN Tech labeling/marketing of some brands are a SCAM, as per 5:18 Would have loved you called out the specific GaN Tech brand you bought as a warning to us consumers.

    The KB117The KB117Před 18 dny
  • Great video. You probably know, but I will mention it anyway. The long leads between transistor and other components, seriously increase the inductance, which limits the speed of the transitors, and increases the switching losses. The only good thing it does is limit voltage spikes when switching, but usually these things are done using specialized drivers, with clamping transistors, and so on. Your signal generator probably doesn't have enough peak current to really drive these transistors at 500kHz. Also in some situations you actually want to slow down the switching (i.e. limiting the current to gate), because due to Miller capacitance there might be weird things going on. For simple SMPS this often can be easily mitgated, but for things like inverters it is more tricky.

    movax20hmovax20hPřed 18 dny
  • make a modem psu

    Akın UlakcıAkın UlakcıPřed 18 dny
  • Just got a robot voice andvert for GAN powered high powered 600v chip, for increased power density and efficiency!

    Sokrates297Sokrates297Před 18 dny
  • The snubber you added to the GaN fet is probably needed because of the inductance of the leads, and it will reduce the efficiency by increasing switching time. A slight flaw, but a good instructional video.

    profdc9profdc9Před 18 dny
  • Could you do a project on a DIY car alarm since you did one for the motorcycles? Perhaps one with a key fob.

    Paul L.Paul L.Před 18 dny
  • Marketing GaN on a consumer device spec sheet is like advertising that all the electrons passing through this device have been hand washed, dried and sorted by unicorns. It is a SCAM to trick buzzword bamboozled bumbleforks out of their hard earned cash. And really man, that device did not even have a GaN element in it, so say it for what it is a scam!

    kobus swartkobus swartPřed 18 dny
  • I dont know if phones use enough power to take a hit in the electric bill. Consumers might care more about durability, charge speed rather than wasted energy.

    altaccoutaltaccoutPřed 18 dny
  • Do you/anybody know of a circuit which will give me a USB-C (PD) port (100W if possible), which I can feed from my DC power Bank (12-24V range)? I can't find such boards, but sureley there must be any...? Have something like the 10 Amp DC Bick/Boost modules in mind, just with USB-C (PD) on the outside.

    yxcvmkyxcvmkPřed 18 dny
  • You are the best!

    Lucas JalúLLucas JalúLPřed 18 dny
  • GaN FET: Not a scam. Some "GaN" power supplies: *_Definite scams._*

    heyidiotheyidiotPřed 18 dny
  • Given the current cost differential- the saving in efficiency isn’t worth it - but once they become cost equal to silicon based fets- even 2% power savings will be worth it.

    Richard TRichard TPřed 18 dny
  • GaN FETs offer higher voltage (Vds), lower Rds(on), and lower gate charge (pick 1 or 2).

    Power MaxPower MaxPřed 18 dny
  • I wonder why I saw an Ad about GaN chips 🤔🤔

    Jakob KasererJakob KasererPřed 18 dny
  • Efficiency is not important at all. If I can charge my phone / device twice as fast but it takes > 2 times the power, say 4 times the power it does not matter. Efficiency matters if you charge an electric car or something that big, but my phone or my laptop? Nu uh.

    Male SylveonMale SylveonPřed 18 dny
  • Chinese brand with fake labelling... I'm so surprised!

    RepoRepoPřed 18 dny
  • So the GaN FET was probably U7 on the other side of the PCB. Also, you cannot just take 2 fets and compare them. There is like a 1000% variance on ESR between MOSFETs.

    Tamás SzabóTamás SzabóPřed 18 dny
  • Nice to see that the industie is shifting to better efficency, but a cost for a single GaN Mosfet is incredible compared to the normal ones

    Marco JansenMarco JansenPřed 18 dny
  • Wtf I just got a af for this

    altijdyourigamesaltijdyourigamesPřed 18 dny
  • Did you try those small Anker ones. Do they deliver the same power while being that much smaller? Kinda curious since you said GaN is less efficient at 5V.

    ABHI FlaMeABHI FlaMePřed 18 dny
  • "and if you build a up a switch mode power supply not as horribly constructed as mine" really Scott?, you think we can do better than that?

  • It's very hard to compare tow deferent FET. There are traditional MOSFETs are extremely efficient. I like to you compare datasheet of most efferent MOSFET with most efficient GaN , The specs (such as DS resistance and on/off time) would show the winner.

    MostrushMostrushPřed 18 dny
  • How well would a GaN work in audio amplifiers?

    Glen MGlen MPřed 18 dny
  • I find it ironic while listening to your vid, I treat what you say as the words of an expert. Then in the video, you mention some "More professional" articles. You as a professional as I need to get. Thank you. Keep broadcasting!!

    John SchusterJohn SchusterPřed 18 dny
  • can GaN microchips be prodused? why is GaN more expensive and how would the lower capacitants impact power efficiency at higher clockspeeds? :O

    Bill WhoeverBill WhoeverPřed 18 dny
  • I don't really think consumers are looking for the maximum power efficiency when choosing a charger. Max power rating is probably the most important. I would guess size of the charger comes second. Then maybe power efficiency Edit: I think the order of importance is 1:Max power rating (Does this work for my device?) 2:Price (Does it fit within my budget?) 3:Size (How convenient is this to bring with me?) 4:??? 5:Power Efficiency

    Tim JadeglansTim JadeglansPřed 18 dny
  • Faster switching only gets you so far. You have to start using resonant circuits so you aren't discharging the source-drain switch capacitance every cycle.

    David GuntherDavid GuntherPřed 18 dny